High Purity Silicon Carbide Powder (SiC)

Silicon Carbide Powder Price & List

Spec.	Purity	Shape	Available
SiC-UH500	≥98%	α-SiC	D50 0.50 um
SiC-UH750	≥99%	α-SiC	D50 0.75 um
SiC-UC200	≥99.99%	β-SiC	D50 0.20 um
SiC-EC005	≥99.99%	β-SiC	D50 5 um
SiC-EC010	≥99.99%	β-SiC	D50 10 um
SiC-FC030	≥99.99%	β-SiC	D50 30 um
SiC-MC080	≥99.99%	β-SiC	D50 80 um
SiC-UH60200	≥99.9999%	α-SiC	D50 0.20 um
SiC-EH60010	≥99.9999%	α-SiC	D50 10 um
SiC-HH60300	≥99.9999%	α-SiC	D50 300 um
SiC-HH60500	≥99.9999%	α-SiC	D50 500 um
SiC-HH60800	≥99.9999%	α-SiC	D50 800 um
SiC-HH60100N	≥99.9999%, N 2-70 ppm	α-SiC	D50 100 um
SiC-HH60300N	≥99.9999%, N 2-70 ppm	α-SiC	D50 300 um
SiC-HH60500N	≥99.9999%, N 2-70 ppm	α-SiC	D50 500 um
SiC-HH601000N	≥99.9999%, N 2-70 ppm	α-SiC	D50 1000 um
SiC-HC50020	≥99.999%	β-SiC	D50 20 um
SiC-HC50050	≥99.999%	β-SiC	D50 50 um
SiC-HC60500	≥99.9999%	β-SiC	D50 500 um
SiC-HC60800	≥99.9999%	β-SiC	D50 800 um
Customizable	≥99.9999%	Customizable	Sieve as required

Note: We provide customized service. If you don't find the powder you want, please send us an email directly. We can customize it according to your requirements.

Silicon Carbide Powder

Silicon carbide is a kind of carbide with yellow to green appearance and blue to black in appearance. The chemical formula is SiC. The density is 3.2 g / cm3. The molecular weight is 40.1. The melting point is 2700 ° C. There are two basic varieties of silicon carbide, black silicon carbide and green silicon carbide, which belong to α - SiC. Black silicon carbide contains about 95% SiC, and its toughness is higher than that of green silicon carbide. It is mostly used for processing materials with low tensile strength, such as glass, ceramics, stone, refractories, cast iron and non-ferrous metals. Green silicon carbide contains more than 97% SiC and has good self sharpening property. It is mostly used for machining cemented carbide, titanium alloy and optical glass. It is also used for honing cylinder liner and finishing high speed steel tools.

Silicon Carbide Powder Application

Ultra-high purity silicon carbide powder is is mainly used for crystal growth. It is mainly used for silicon carbide single crystal growth raw materials, vapor SiC ingot, SiC wafer manufacture, electric car, precision silicon carbide ceramic parts in semiconductor equipment and LED equipment, etc. According to different applications, high-purity silicon carbide powder can be divided into semi insulating semiconductor grade silicon carbide powder, conductive semiconductor grade silicon carbide powder, semiconductor grade 3C-SiC silicon carbide powder, 3C-SiC silicon carbide ceramic powder, high-purity silicon carbide powder for thermal conductive filler, etc.

High Purity Silicon Carbide Powder for Semi Insulating Semiconductors

Spec.	Purity	Shape	Available
SiC-HH60300	≥99.9999%	α-SiC	D50 300 um
SiC-HH60500	≥99.9999%	α-SiC	D50 500 um
SiC-HH60800	≥99.9999%	α-SiC	D50 800 um
Customizable	≥99.9999%	Customizable	Sieve as required

High Purity Silicon Carbide Powder for N-type Conductive Semiconductors

Silicon carbide crystal material is a new generation of wide bandgap semiconductor material that can break through the theoretical limitations of silicon based semiconductor materials. It has high thermal conductivity (3 times that of silicon), high breakdown electric field strength (10 times that of silicon), high saturated electron drift speed (2 times that of silicon), small dielectric constant, strong radiation resistance, good chemical stability, and small lattice mismatch with GaN (4%). It is a new generation of light-emitting diode (LED) substrate material High power power electronic materials.

Conductive semiconductor grade silicon carbide powder is mainly aimed at the growth needs of the third generation semiconductor - conductive silicon carbide single crystal. The particle size can be accurately controlled at the level of hundreds of micrometers to millimeters, and the product purity is higher than 6N. The nitrogen content can be selected according to the needs of different content range types of products.

It is mainly used for the growth of N-type conductive silicon carbide crystals. It is mainly used in fields such as new energy vehicles, high-voltage transmission and transformation stations, white goods, high-speed trains, motors, photovoltaic inverters, pulse power supplies, etc. It has advantages in reducing equipment energy loss, improving equipment reliability, reducing equipment volume, and improving equipment performance. It has irreplaceable advantages in the production of electrical and electronic devices.

Spec.	Purity	Shape	Available
SiC-HH60100N	≥99.9999%, N 2-70 ppm	α-SiC	D50 100 um
SiC-HH60300N	≥99.9999%, N 2-70 ppm	α-SiC	D50 300 um
SiC-HH60500N	≥99.9999%, N 2-70 ppm	α-SiC	D50 500 um
SiC-HH601000N	≥99.9999%, N 2-70 ppm	α-SiC	D50 1000 um
Customizable	≥99.9999%, N 2-70 ppm	Customizable	Sieve as required

3C-SiC High Purity Silicon Carbide Powder for Semiconductors (3C-SiC)

Semiconductor grade 3C-SiC silicon carbide powder is mainly designed for the special needs of different growth processes of third-generation semiconductor silicon carbide single crystals, with a particle size of up to 100 micrometers and a product purity of up to 6N.

Spec.	Purity	Shape	Available
SiC-HC50020	≥99.999%	β-SiC	D50 20 um
SiC-HC50050	≥99.999%	β-SiC	D50 50 um
SiC-HC60500	≥99.9999%	β-SiC	D50 500 um
SiC-HC60800	≥99.9999%	β-SiC	D50 800 um
Customizable	≥99.9999%	Customizable	Sieve as required

High Purity 3C-SiC Type Silicon Carbide Ceramic Powder (4N-6N)

Silicon carbide ceramics not only have excellent room temperature mechanical properties, such as bending strength, oxidation resistance, corrosion resistance, wear resistance, and low friction coefficient, but also have the best high-temperature mechanical properties among known ceramic materials. Silicon carbide ceramic products produced by processes such as hot pressing sintering, pressureless sintering, and hot isostatic pressing sintering can maintain their high-temperature strength up to 1600 ℃, making them the best high-temperature strength material among all ceramic materials.

We can produce and provide 3C-SiC micron and submicron silicon carbide ceramic powders. The purity of the product can be regulated by 4N-6N, and the product has advantages such as high purity, uniform particle size, high volume fraction, and high crystallinity.
3C-SiC Type Silicon Carbide Ceramic Powder

Spec.	Purity	Shape	Available
SiC-UC200	≥99.99%	β-SiC	D50 0.20 um
SiC-EC005	≥99.99%	β-SiC	D50 5 um
SiC-EC010	≥99.99%	β-SiC	D50 10 um
SiC-FC030	≥99.99%	β-SiC	D50 30 um
SiC-MC080	≥99.99%	β-SiC	D50 80 um
Customizable	≥99.99%	Customizable	Sieve as required

High Purity Silicon Carbide Powder (Electronic Grade) for Thermal Management Materials and Thermal Fillers

High purity silicon carbide powder has excellent characteristics such as high thermal conductivity (165W/M.K), small thermal expansion coefficient, corrosion resistance, chemical and thermal stability, high strength, and high hardness, making it have broad prospects in the preparation of ultra-high thermal conductivity composite materials.

We can produce and provide high-purity silicon carbide powder as thermal conductive filler for heating management materials. The powder adopts the internationally pioneered precursor derivation method and self propagating sintering method, and the high-purity silicon carbide powder obtained has a huge price advantage, which can greatly promote the application of high-purity silicon carbide powder in the field of thermal management materials.

Spec.	Purity	Shape	Available
SiC-UH60200	≥99.9999%	α-SiC	D50 0.20 um
SiC-EH60010	≥99.9999%	α-SiC	D50 10 um
Customizable	≥99.9999%	Customizable	Sieve as required

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